Publication

  1. B. Kang and K. Biswas, “Shallow trapping vs. deep polarons in a hybrid lead halide perovskite, CH3NH3PbI3“, Physical Chemistry Chemical Physics (2017).
  2. B. Kang and K. Biswas, “Preferential CH3NH3+ Alignment and Octahedral Tilting Affect Charge Localization in Cubic Phase CH3NH3PbI3”, Journal of Physical Chemistry C 121, 8319 (2017).
  3. Q. Feng, R. Noumbissi, K. Biswas, and H. Koizumi, “The role of hydroxyl groups in interchain interactions in cellulose Iα and IβInt. J. Quantum Chemistry 117, e25357 (2017).
  4. Q. Feng and K. Biswas, “Ramifications of codoping SrI2:Eu with isovalent and aliovalent impurities” J. Appl. Phys. 120, 213104 (2016).
  5. By. Kang, C. M. Fang, and K. Biswas, “A first-principles based study of ns2 containing ternary iodides and their possibility of scintillation” J. Phys. D: Appl. Phys. 49, 395103 (2016).
  6. By. Kang and K. Biswas, “Carrier Self-trapping and Luminescence in Intrinsically Activated Scintillator: Cesium Hafnium Chloride (Cs2HfCl6) Journal of Physical Chemistry C 120, 12187 (2016).
  7. C-M Fang and K. Biswas, “Quaternary Iodides A(BaSr)I5:Eu2+ (A = K, Cs) as Scintillators for Radiation DetectionJournal of Physical Chemistry C 120, 1225 (2016).
  8. Kang et al., “Emerging New Pseudobinary and Ternary Halides as Scintillators for Radiation Detection” IEEE Transactions on Nuclear Science (2016).
  9. C-M Fang and K. Biswas, “Preferential Eu Site Occupation and Its Consequences in the Ternary Luminescent Halides AB2I5Eu2+ (A=LiCs; B=Sr, Ba)” Physical Review Applied 4, 014012 (2015).
  10. R. Adhikari, Q. Li, R. Williams, A. Burger, and K. Biswas, “DX-like centers in NaI:Tl upon aliovalent codoping”  Journal of Applied Physics 116, 223703 (2014).
  11. Q. Li, R. T. Williams, A. Burger, R. Adhikari, and K. Biswas, “Search for improved-performance scintillator candidates among the electronic structures of mixed halides”, Proceedings of SPIE 9213, 92130M (2014).
  12. M.-H. Du and K. Biswas, “Electronic structure engineering of elpasolites: Case of Cs2AgYCl6Journal of Luminescence 143, 710 (2013).
  13. K. Biswas, M.-H. Du, and D. J. Singh “Electronic structure and defect properties of Tl6SeI4: Density functional calculations” Physical Review B 86, 144108 (2012).
  14. K. Biswas, M.-H. Du, J. T-Thienprasert, S. Limpijumnong, and D. J. Singh, Comment on “Uncovering the complex behavior of hydrogen in Cu2O” Physical Review Letters 108, 219703 (2012).
  15. K. Biswas and M.-H. Du, “Energy transport and scintillation of Cerium doped elpasolite Cs2LiYCl6: hybrid density functional calculations” Physical Review B 86, 014102 (2012).
  16. K. Biswas and M.-H. Du, “What Causes of high resistivity in CdTe” New Journal of Physics 14, 063020 (2012).
  17. M.-H. Du and K. Biswas, “Anionic and hidden hydrogen in ZnO”, Physical Review Letters 106, 115502 (2011).
  18. K. Biswas and M.-H. Du, “AX centers in II-VI semiconductors: Hybrid Functional Calculations”, Applied Physics Letters 98, 181913 (2011).
  19. M.-H. Du, K. Biswas, and D. J. Singh, “Electronic structure, energy transport, and optical properties of halide scintillators”, Proceedings of SPIE 8507, 850705 (2012).
  20. M.-H. Du, K. Biswas, and D. J. Singh, “Resistivity, carrier trapping, and polarization phenomenon in semiconductor radiation detection materials”, Proceedings of SPIE 8507, 85070M (2012).
  21. G. Trimarchi, H. Peng, J. Im, A. J. Freeman, V. Cloet, A. Raw, K. R. Poeppelmeier, K. Biswas, S. Lany, and A. Zunger, “Using design principles to systematically plan the synthesis of hole-conducting transparent oxides: Cu3VO4 and Ag3VO4 as a case study”, Physical Review B 84, 165116 (2011).
  22. K. Biswas and M.-H. Du, “First principles study of native defects in InI”, Journal of Applied Physics 109, 113518 (2011).
  23. K. Biswas, S. Lany, and A. Zunger, “The electronic consequences of multivalent elements in inorganic solar absorbers: Multivalency of Sn in Cu2ZnSnS4”, Applied Physics Letters 96, 201902 (2010).
  24. M. Beekman, E. N. Nenghabi, K. Biswas, C. W. Myles, M. Baitinger, Y. Grin, and G. S. Nolas, “Framework Contraction in Na-Stuffed Si(cF 136)”, Inorganic Chemistry 49, 5338 (2010).
  25. K. Biswas and S. Lany, “Energetics of quaternary III-V alloys described by incorporation and clustering of impurities”, Physical Review B 80, 115206 (2009).
  26. K. Biswas, A. Franceschetti, and S. Lany, “Generalized valence-force-field model of (Ga,In)(N,P) ternary alloys”, Physical Review B 78, 085212 (2008).
  27. K. Biswas, C. W. Myles, M. Sanati, and G. S. Nolas “Thermal properties of guest-free Si136 and Ge136 clathrates: A first-principles study”, Journal of Applied Physics 104, 033535 (2008).
  28. K. Biswas and C. W. Myles, “Electronic and vibrational properties of framework-substituted type-II Si clathrates”, Physical Review B 75, 245205 (2007).
  29. K. Biswas and C. W. Myles, “Density-functional investigation of Na16A8Ge136(A=Rb,Cs)clathrates”, Journal of Physics: Condensed Matter 19, 466206 (2007).
  30. K. Biswas and C. W. Myles, “Electronic properties of the Na16Rb8Si136and K16Rb8Si136clathrates”, Physical Review B 74, 115113 (2006).
  31. C. W. Myles, K. Biswas, and E. Nenghabi, “Rattling guest impurities in Si and Ge clathrate semiconductors”, Physica B 401, 695 (2007).
  32. K. Biswas, S. Gangopadhyay, H. C. Kim, and R. D. Miller, “Nanoporous organosilicate films as antireflection coatings”, Thin Solid Films 514, 350 (2006).
  33. S Gangopadhyay, J. A. Lubguban, B. Lahlouh, G. Sivaraman, K. Biswas, T. Rajagopalan, N. Biswas, H.-C. Kim, W. Volksen, R. D. Miller, “Supercritical CO2 Treatments for Semiconductor Applications”, MRS Proceedings 812, F4.6 (2004).

 

Invited Presentations

  1. K. Biswas (2014) “Search for improved-performance scintillator candidates among the electronic structures of mixed halides”, SPIE Optics+Photonics, San Diego, CA, August, 2014.
  2. K. Biswas (2014) “Impurities in TlBr”, TlBr Workshop & Review Meeting, University of Michigan, Ann Arbor, MI, June, 2014.
  3. K. Biswas (2014) “Scintillation Mechanisms in Gamma Detectors – Electronic Structure Theory”, Department of Energy-National Nuclear Security Administration, Washington, DC, April, 2014.
  4. K. Biswas (2013) “Density functional models of semiconductors”, TlBr Workshop & Review Meeting, Harvard University, Cambridge, MA, September 19, 2013.
  5. K. Biswas (2013) “DFT based study of materials for radiation detector application”, 6th DNDO-NSF Annual Academic Research Initiative (ARI) Grantees Program Review, Leesburg, VA, July, 2013.
  6. K. Biswas (2013) “DFT Studies of Semiconductor and Scintillator Detection Materials”, 2013 March meeting of the American Physical Society, Baltimore, MD, Mar, 2013.
  7. K. Biswas (2012) “Materials for application in photovoltaics and optoelectronics”, Applied Materials Science Division, Saha Institute of Nuclear Physics, Calcutta, India, May, 2012.
  8. K. Biswas (2012) “Materials for application in photovoltaics and optoelectronics”, Graduate Seminar Series, Materials Science and Engineering Department, University of Tennessee, Knoxville, February, 2012.

Contributed Presentations

  1. K. Biswas (2014) “Physics Driven Scintillator Design: Co-doping Effects and Solid Solution Properties”, 7th DNDO-NSF Annual Academic Research Initiative (ARI) Grantees Program Review, Leesburg, VA, June, 2014.
  2. K. Biswas, M-H. Du, and D. J. Singh, (2013) “Density functional study of the properties of Tl6SeI4 for radiation detection applications” and “Electronic Structure Engineering of Elpasolites for Brighter and Faster Scintillators”, March Meeting of the American Physical Society, Baltimore, MD, March, 2013.
  3. K. Biswas et al. (2012) (i) “Using design principles to plan the synthesis of p-type transparent conducting oxides” (ii) “Compensation mechanism in highly resistive CdTe for application in radiation detectors” MRS Spring Meeting, San Francisco, CA, April, 2012.
  4. K. Biswas (2012) College of Science Seminar, “Materials for application in photovoltaics and optoelectronics”, Department of Chemistry and Physics, Arkansas State University, March, 2012.
  5. K. Biswas and M-H. Du, (2012) “AX centers in II-VI semiconductors: Hybrid functional calculations”, 2012 March Meeting of the American Physical Society, Boston, MA, February, 2012.
  6. K. Biswas, D. J. Singh, and M.-H. Du (2011) “First principles study of defects and compensation in CdTe for room temperature radiation detection”, II-VI Workshop, Chicago, IL, October, 2011.
  7. K. Biswas and M.-H. Du, (2011) “Study of defects in TlBr, InI as potential semiconductor radiation detectors”, March Meeting of the American Physical Society, Dallas, TX, March, 2011.
  8. M.-H. Du, K. Biswas, and D. J. Singh ,(2011) “Effective Dielectric Screening and Defect Properties in Halide-based Semiconductor Radiation Detectors”, MRS Spring Meeting, Symposium U, April, 2011.
  9. S. Lany, K. Biswas, J. Vidal, and A. Zunger, (2011) “Theory of Bandstructure and Defect Properties in Compound Semiconductors for Energy Applications”, MRS Spring Meeting, Symposium D, April, 2011.
  10. S. Lany, K. Biswas, and A. Zunger, (2011) “The Electronic Consequences of Multivalent Elements in Inorganic Solar Absorbers: Multivalency of Sn in Cu2ZnSnS4”, MRS Spring Meeting, Symposium D, April, 2011.
  11. K. Biswas, S. Lany, and A. Zunger, (2010) “Multivalency of Sn and its implication in Cu2ZnSnS4”, Gordon Research Conference on Defects in Semiconductors, New London, NH, August, 2010.
  12. K. Biswas, S. Lany, and A. Zunger, (2010) “Multivalency of Sn in Cu2ZnSnS4”, March Meeting of the American Physical Society, Portland, OR, March, 2010.
  13. K. Biswas, A. Franceschetti, and S. Lany, (2009) “Quaternary (Ga,In)(P,N) alloys described by clustering of In and N in GaP”, March Meeting of the American Physical Society, Pittsburgh, PA, March, 2009.
  14. K. Biswas, A. Franceschetti, and S. Lany (2008) “First principles and valence force field study of III-V quaternary alloys”, March Meeting of the American Physical Society, New Orleans, LA, March, 2008.
  15. K. Biswas and C. W. Myles, (2007) “Electronic and vibrational properties of the Na16Rb8Si136 and K16Rb8Si136 clathrates”, March Meeting of the American Physical Society, Denver, CO, March, 2007.
  16. C. W. Myles, K. Biswas, and E. Nenghabi, (2007) “Rattling guest impurities in Si and Ge clathrate semiconductors” Poster presented at the 24th International Conference on Defects in Semiconductors, Albuquerque, NM, July, 2007.